[5] The memory storage capacity for M number of address lines is given by 2M, which is usually in power of two: 2, 4, 8, 16, 32, 64, 128, 256 and 512 and measured in kilobits, megabits, gigabits or terabits, etc.By combining several integrated circuits, memory can be arranged into a larger word length and/or address space than what is offered by each chip, often but not necessarily a power of two.To increase data rate, in some of the latest types of memory chips such as DDR SDRAM multiple words are accessed with each read or write operation.[9] Bipolar semiconductor memory made from discrete devices was first shipped by Texas Instruments to the United States Air Force in 1961.The same year, the concept of solid-state memory on an integrated circuit (IC) chip was proposed by applications engineer Bob Norman at Fairchild Semiconductor.[15] This led to MOSFETs eventually replacing magnetic cores as the standard storage elements in computer memory.Wood and R. Ball of the Royal Radar Establishment proposed digital storage systems that use CMOS (complementary MOS) memory cells, in addition to MOSFET power devices for the power supply, switched cross-coupling, switches and delay-line storage.[21] In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology.[31][32] In 1967, Dawon Kahng and Simon Sze of Bell Labs proposed that the floating gate of a MOS semiconductor device could be used for the cell of a reprogrammable read-only memory (ROM), which led to Dov Frohman of Intel inventing EPROM (erasable PROM) in 1971.[33] EEPROM (electrically erasable PROM) was developed by Yasuo Tarui, Yutaka Hayashi and Kiyoko Naga at Japan's Ministry of International Trade and Industry (MITI) Electrotechnical Laboratory in 1972.
4M EPROM, showing transparent window used to erase the chip