Carl John[1] Frosch (September 6, 1908 – May 18, 1984)[2] was a Bell Labs researcher who along Lincoln Derick build the first silicon dioxide field effect transistors.[3][4] Such protective coating overcame a problem of surface states found in active silicon circuit elements.Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957.[10] Later, Jean Hoerni, while working at Fairchild Semiconductor, had first patented the planar process in 1959.[11][12] Frosch and Derrick build several silicon dioxide field effect transistors in 1957.
